Selected experimental and engineering contributions from ongoing and past work.
NIST · 2023 — Present
Microwave Transmission Measurements of Correlated & Wigner Crystal States Using Gapped CPW
Performing high-frequency microwave transmission measurements using gapped coplanar waveguide (CPW) devices to probe correlated insulating and Wigner crystal states in TMD moiré heterostructures. The gapped CPW geometry enables sensitive detection of changes in the dielectric environment as the system is tuned through correlated phases via gate voltage, providing a non-invasive window into the quantum many-body ground states of the 2D electron system. CPW devices were fabricated on-chip using optical lithography and thin-film deposition techniques.
Gapped CPWVNAMicrowave TransmissionTMD HeterostructuresCorrelated InsulatorsWigner CrystalsDilution FridgeThin-Film DepositionOptical LithographyDevice Fabrication (CPW on chip)
NIST · 2022 — Present
Modular Python Measurement Suite for Synchronized RF & DC Sweeps
Designed and built a fully automated, modular Python codebase coordinating a Keysight N5234A VNA, two 33522A AWGs, and an Agilent 34410A DMM. Enables gate-voltage-resolved S21/S11 frequency sweeps and CW time-series measurements with synchronized triggering — used directly for microwave transmission studies of correlated insulating states in TMD devices at NIST.
PythonPyVISAVNAAWGDMMGPIB
NIST · 2023 — Present
PCB Design for High-Frequency and DC Measurement Setups
Designed custom PCBs in KiCAD for two distinct measurement regimes: a high-frequency RF board for microwave transmission measurements of 2D devices, and a DC board for Hall bar magnetotransport measurements. Both boards were integrated into cryogenic setups (Bluefors and Oxford Triton dilution refrigerators).
KiCADRF PCBDC PCBBlueforsOxford Triton
NIST · 2023
Hall Bar Magnetotransport on BST and Si Samples
Performed DC magnetotransport measurements on Barium Strontium Titanate (BST) and Si-based Hall bar devices using lock-in amplifiers, extracting carrier density, Hall mobility, and sheet resistance as a function of gate voltage and applied magnetic field.
Lock-in AmplifiersHall BarBSTSiDC Transport
NISER · 2021 — 2022
Fabrication of S,O-Chelated Borane Optoelectronic Devices
Contributed to the fabrication and characterisation of boron-thioketonate based thin-film devices for optoelectronic applications during master's research and subsequent research scholar year at NISER, resulting in a publication in Angewandte Chemie (2023).
Probe Station MeasurementsAngewandte Chemie 2023
